System for molecular beam epitaxy, type Octoplus 350

System for molecular beam epitaxy, type Octoplus 350.

Molecular beam epitaxy system equipped with one growth chambers, one UHV preparation chamber including connection for a vacuum suitcase and a loadlock chamber with capacity for eight two-inch wafers or flag style sample plates. Sample growth can be performed in the temperature range 77–1273 K and in-situ followed using reflection high-energy electron diffraction.

The system is designed for growth of superlattices based on two-dimensional layered transition metal chalcogenides, and other layered materials containing Mo, S, Co, Fe, Mn, Sn, Gd, O.